AON7232 general description product summary v ds i d (at v gs =10v) 37a r ds(on) (at v gs =10v) < 13.5m? r ds(on) (at v gs =4.5v) < 16.5m? applications 100% uis tested 100% rg tested 100v n-channel mosfet orderable part number package type form minimum order quantity 100v ? trench power mv mosfet technology ? low r ds(on) ? low gate charge ? logic level driven AON7232 dfn 3.3x3.3 tape & reel 3000 ? synchronous rectification in ac-dc/dc-dc conve rter ? synchronous rectification in cell phone quick charger g ds top view 12 3 4 8 76 5 dfn 3.3x3.3 top view bottom view pin 1 pin 1 symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 2.6 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 4.1 power dissipation a maximum junction-to-ambient a c/w r q ja 25 50 30 w i d v a 26 a 62 i dsm 9.5 mj 34 12 37 va absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.6 60 3.2 power dissipation b 15.5 t c =100c 10s p d 100 120 39 gate-source voltage pulsed drain current c 23 parameter drain-source voltage continuous drain current rev.1.0: nov 2015 www.aosmd.com page 1 of 6
AON7232 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v 11 13.5 t j =125c 20 24.5 13 16.5 m? g fs 50 s v sd 0.7 1 v i s 37 a c iss 1770 pf c oss 145 pf c rss 10 pf r g 0.5 1.2 2 ? q g (10v) 26 40 nc q g (4.5v) 12 20 nc q gs 4.5 nc q gd 4.5 nc t d(on) 6 ns t r 3 ns t d(off) 27 ns t f 4 ns m? v gs =10v, v ds =50v, i d =12a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250a, v gs =0v r ds(on) static drain-source on-resistance gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current turn-off delaytime turn-off fall time v gs =10v, v ds =50v, r l =4.2 w , r gen =3 w diode forward voltage dynamic parameters v gs =4.5v, i d =10a turn-on rise time reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz v ds =v gs, i d =250 m a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =12a v gs =10v, i d =12a t f 4 ns t rr 23 ns q rr 96 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =12a, di/dt=500a/ m s turn-off fall time i f =12a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: nov 2015 www.aosmd.com page 2 of 6
AON7232 typical electrical and thermal characteristics 0 20 40 60 80 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 5 8 11 14 17 20 0 5 10 15 20 25 30 r ds(on) (m w ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =10a v gs =10v i d =12a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3v 3.5v 4.5v 10v 4v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 8 16 24 32 2 4 6 8 10 r ds(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =12a 25 c 125 c rev.1.0: nov 2015 www.aosmd.com page 3 of 6
AON7232 typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 4.5v 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 10ms 0 30 60 90 120 150 180 210 240 270 300 1e-05 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =50v i d =12a t j(max) =150 c t c =25 c 10 m s v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =3.2 c/w rev.1.0: nov 2015 www.aosmd.com page 4 of 6
AON7232 typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 50 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =60 c/w rev.1.0: nov 2015 www.aosmd.com page 5 of 6
AON7232 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr figure d: diode recovery test circuit & waveforms rev.1.0: nov 2015 www.aosmd.com page 6 of 6
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